2002 Sep 02 2
NXP Semiconductors
Product data sheet
Schottky barrier double diode BAT74V
FEATURES
?
Low forward voltage
?
Low capacitance
?
Ultra small SMD plastic package
?
Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS
?
Ultra high-speed switching
?
Voltage clamping
?
Line termination
?
Inverse polarity protection.
DESCRIPTION
Planar Schottky barrier double diode with an integrated
guard ring for stress protection.
Two separate dies encapsulated in a SOT666 ultra small
SMD plastic package.
PINNING
PIN
DESCRIPTION
1
anode
1
2
not connected
3
cathode
2
4
anode
2
5
not connected
6
cathode
1
handbook, halfpage
123
4
6
5
Top view
MAM461
64
3
1
Fig.1 Simplified outline (SOT666) and symbol.
Marking code:
74.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
?
30
V
IF
continuous forward current
?
200
mA
IFRM
repetitive peak forward current
tp
≤
1
s; δ
≤
0.5
?
300
mA
IFSM
non-repetitive peak forward current
tp
<
10
ms
600
mA
Ptot
total power dissipation
Tamb
≤
25
°C
?
230
mW
Tstg
storage temperature
?65
+150
°C
Tj
junction temperature
?
125
°C
Tamb
operating ambient temperature
?65
+125
°C
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